The ELW3120 consists of an infrared light emitting diodes
and integrated high gain, high-speed photo detectors. The
device is housed in an 8 pin DIP wide body package and
available in SMD package option.
The photo detector has an internal shield that provides a
guaranteed common-mode transient immunity of ±20 kV/μs. It is
suitable for direct gate driving circuit for IGBTs or power
MOSFETs.